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<version>v8.0</version>
<date>2024-04-23 19:13:38</date>
<action>I</action>
<registdate>2024-04-23 18:47:58</registdate>
<modifydate>2024-04-23 18:50:46</modifydate>
<publishdate>2024-04-23 19:13:31</publishdate>
<embargo>N</embargo>
<newsid>694947</newsid>
<orgid>694735</orgid>
<language>EN</language>
<category1>20</category1>
<category2>2001</category2>
<category1_name>기업</category1_name>
<category2_name>중기/벤처/기타</category2_name>
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<newsSubject><![CDATA[Samsung Electronics, Mass Producing 1Tb TLC 9th Generation V-NAND]]></newsSubject>
<newsSummary><![CDATA[]]></newsSummary>
<newsTag><![CDATA[SamsungElectronics,MassProducing,1Tb,TLC]]></newsTag>
<newsLinks><![CDATA[]]></newsLinks>
<news_prolog><![CDATA[(Seoul=NSP NEWS AGENCY) =]]></news_prolog>
<news1><![CDATA[Samsung Electronics has begun mass production of 1Tb(Terabit) TLC(Triple Level Cell) 9th generation V-NAND.

Samsung Electronics increased the bit density of its 1Tb TLC 9th generation V-NAND by about 1.5 times compared to the previous generation by implementing the industry’s smallest cell size and minimum mold thickness.

Samsung Electronics’ 9th generation V-NAND is the highest level product that can be implemented in a double stack structure, and productivity has also improved through process innovation that penetrates the industry’s largest number of levels at once through Channel Hole Etching technology.

The 9th generation V-NAND uses Toggle 5.1, the next-generation NAND flash interface, and achieves a data input/output speed of up to 3.2Gbps, a 33% improvement over the 8th generation V-NAND.

Based on this, Samsung Electronics plans to solidify its leadership in NAND flash technology by supporting the PCIe 5.0 interface and expanding the high-performance SSD market.

The 9th Gen V-NAND also features low-power design technology, which improves power consumption by approximately 10 per cent over previous generation products.

In addition to TLC 9th generation V-NAND, Samsung Electronics plans to mass-produce QLC(Quad Level Cell) 9th generation V-NAND in the second half of this year to accelerate the development of high-capacity and high-performance NAND flash required in the AI era.]]></news1>
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<news_epilog_byline><![CDATA[By Soon-ki Lee(s8789@nspna.com) and Bok-hyun Lee(bhlee2016@nspna.com)]]></news_epilog_byline>
<news_epilog><![CDATA[ⓒNSP News Agency·NSP TV. All rights reserved. Prohibits using to train AI models.]]></news_epilog>
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<location><![CDATA[Seoul]]></location>
<teamID>110</teamID>
<teamName><![CDATA[국제부]]></teamName>
<writerID>s8789</writerID>
<writerName><![CDATA[Soon-ki Lee]]></writerName>
<writerTitle><![CDATA[Reporter]]></writerTitle>
<writerEmail><![CDATA[s8789@nspna.com]]></writerEmail>
<writerID2>bhlee2016</writerID2>
<writerName2><![CDATA[Bok-hyun Lee]]></writerName2>
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